BDX65 ? a ? b ? c 24/10/2012 comset semiconductors 1 | 4 npn silicon darlington power transistor the BDX65, BDX65a, BDX65 and BDX65c are mounted in to-3 metal package. high current power darlingtons designed for power amplification and switching applications. the complementary pnp are bdx64, bdx64a, bdx64b, bdx64c. compliance to rohs. absolute maximum ratings symbol ratings value unit v ceo collector-emitter voltage BDX65 60 v BDX65a 80 BDX65b 100 BDX65c 120 v cbo collector-basevoltage BDX65 80 v BDX65a 100 BDX65b 120 BDX65c 140 v ebo emitter-base voltage 5.0 v i c collector current i c ( rms ) 12 a i cm 16 i b base current 0.2 a p t power dissipation @ t c = 25 117 w t j junction temperature -55 to +200 c t s storage temperature thermal characteristics symbol ratings value unit r thj-c thermal resistance, junction to case 1.5 c/w www.datasheet.net/ datasheet pdf - http://www..co.kr/
BDX65 ? a ? b ? c 24/10/2012 comset semiconductors 2 | 4 electrical characteristics tc=25c unless otherwise noted symbol ratings test condition(s) min typ max unit v ceo(sus) collector-emitter breakdown voltage (*) i c =0.1 a i b =0 l=25mh BDX65 60 - - v BDX65a 80 - - BDX65b 100 - - BDX65c 120 - - i ceo collector cutoff current v ce =30 v BDX65 - - 1 ma v ce =40 v BDX65a - - v ce =50 v BDX65b - - v ce =60 v BDX65c - - i ebo emitter cutoff current v be =5 v BDX65 - - 5.0 ma BDX65a BDX65b BDX65c i cbo collector-base cutoff current v cbo =60 v BDX65 - - 0.4 - v cbo =40 v t case =200c - - 3 v cbo =50 v BDX65a - - 0.4 v cbo =80 v t case =200c - - 3 v cbo =100 v BDX65b - - 0.4 v cbo =60 v t case =200c - - 3 v cbo =120 v BDX65c - - 0.4 v cbo =70 v t case =200 - - 3 v ce(sat) collector-emitter saturation voltage (*) i c =5.0 a i b =20 ma BDX65 - - 2 v BDX65a BDX65b BDX65c v f forward voltage (pulse method) i f =3 a BDX65 - 1.8 - v BDX65a BDX65b BDX65c v be base-emitter voltage (*) i c =5.0 a v ce =3v BDX65 - - 2.5 v BDX65a BDX65b BDX65c www.datasheet.net/ datasheet pdf - http://www..co.kr/
BDX65 ? a ? b ? c 24/10/2012 comset semiconductors 3 | 4 symbol ratings test condition(s) min typ max unit f hfe cut-off frequency v ce =3 v i c =5 a BDX65 - 50 - khz BDX65a BDX65b BDX65c f t transition frequency v ce =3 v i c =5 a f=1 mhz BDX65 - 7 - mhz BDX65a BDX65b BDX65c h fe d.c. current gain (*) v ce =3 v i c =1 a BDX65 - 3300 - - BDX65a BDX65b BDX65c v ce =3 v i c =5 a BDX65 1000 - - BDX65a BDX65b BDX65c v ce =3 v i c =10 a BDX65 - 3700 - BDX65a BDX65b BDX65c (*) pulse width 300 s, duty cycle 2.0% www.datasheet.net/ datasheet pdf - http://www..co.kr/
BDX65 ? a ? b ? c 24/10/2012 comset semiconductors 4 | 4 mechanical data case to-3 revised september 2012 ????????? ? information furnished is believed to be accurate and reliable. ho wever, comset semiconductors assumes no responsibility for the consequences of use of such information nor for any infringement of patents or ot her rights of third parties which may results from its use. da ta are subject to change without notice. co mset semiconductors makes no warranty, representation or guarantee re garding the suitability of its products for any particular purpose, nor does comset semicond uctors assume any liability aris ing out of the application or us e of any product and specifica lly disclaims any and all liability, including without limitation consequential or in cidental damages. comset semiconductors? products are not au thorized for use as critical components in life support devices or systems. ? ? www.comsetsemi.com info@comsetsemi.com dimensions (mm) min max a 11 13.10 b 0.97 1.15 c 1.5 1.65 d 8.32 8.92 f 19 20 g 10.70 11.1 n 16.50 17.20 p 25 26 r 4 4.09 u 38.50 39.30 v 30 30.30 pin 1 : base pin 2 : emitter case : collector www.datasheet.net/ datasheet pdf - http://www..co.kr/
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